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| SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 4 FEBRUARY 1996 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL MIN. 35 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 75 15 150 0.12 0.40 0.9 0.8 200 200 150 50 240 25 55 300 25 5 0.1 10 0.1 0.3 0.6 1.25 1.0 300 MHz 50 pF ns ns FZT749 FZT649 C E C B FZT649 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 35 25 5 8 3 2 -55 to +150 UNIT V V V A A A ABSOLUTE MAXIMUM RATINGS. UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). CONDITIONS. IC=100A IC=10mA* IE=100A VCB=30V VCB=30V,Tamb=100C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA V V V V fT Cobo ton toff *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 205 FZT649 TYPICAL CHARACTERISTICS 0.8 200 V+ -=2V - (Volts) I+ /I*=10 0.4 - Gain 100 0.6 V 0.2 h 0 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 2.0 1.2 - (Volts) - (Volts) 1.0 IC/IB=10 1.0 V+ -=2V V V 0.01 0.1 1 10 0.8 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse T est at Tamb=25C td tr tf ns VBE(on) v IC IB1=IB2=IC/10 140 1 Switching time 120 td ts ns 100 tr 1000 80 tf 800 0.1 DC 1s 100ms 10ms 1ms 100s 60 ts 40 600 400 20 200 0.01 0 0.01 0.1 1 0 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area 3 - 206 Switching Speeds |
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